Physical Chemistry of Semiconductor Materials and Processes by Pizzini Sergio;

Author:Pizzini, Sergio;
Language: eng
Format: epub
Publisher: John Wiley & Sons, Incorporated
Published: 2015-08-13T00:00:00+00:00

Another issue of relevant interest concerns the controversy regarding the dislocation nucleation and motion in the glide and in the shuffle set.

It is known that at low temperatures and under gigapascals stresses, perfect dislocations nucleate in the shuffle set, while at high temperatures and under lower stresses dislocations nucleate in the glide set [46].

It is also known that while theoretical arguments predict that slip in silicon should occur on the shuffle planes, experimental observations indicate that slip does occur on the glide planes and involves dislocation partials originated by perfect dislocation dissociation [23].

The physical grounds behind these features are that edge dislocations [47] spontaneously dissociate in the glide set in and partials, with the set-up of a low energy SF, as was already shown.

In addition, at least in silicon, the dislocations do not move by rigid translation but rather via a mechanism called dislocation drag associated with the formation of a kink (step a) and its propagation (step b and c) (see Figure 3.9). Within the elastic theory, kinks are dislocation segments which bring a part of a dislocation lying on a low energy direction to an adjacent low energy site, dragging the entire dislocation through a unit translation.

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